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1 August 2017 The influence of 1/ f noise on the electrical derivative initial peak of high-power semiconductor laser diodes
Jinyuan Wang, Jian Guan, Shuxu Guo, Meili Xu, Fengli Gao
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Proceedings Volume 10339, Pacific Rim Laser Damage 2017: Optical Materials for High-Power Lasers; 103391V (2017) https://doi.org/10.1117/12.2277597
Event: Pacific Rim Laser Damage 2017: Optical Materials for High Power Lasers, 2017, Shanghai, China
Abstract
We report a close connection between the fluctuation characteristics of the electrical derivative (ED) initial peaks and the 1/f noise intensities of different samples we found during the investigation of the 1/f noise origins of InGaAs quantum well high-power semiconductor laser diodes (LDs). We conduct contrast measurements on over fifty samples, where the current 1/f noise is measured under different bias currents, expressed by power spectrum density (PSD) and the EDs are computed from the current-voltage (I-V) measurement results. Then the influence of 1/f noise on the ED initial peaks is presented by comparing these parameters of different samples. The results show a clear pattern between the noise intensity and the ED initial peak fluctuation, and distinct differences between functional and aged LD devices, showing that ED initial peak can also be a non-destructive testing method for high power LD cavity damage and surface defects.
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Jinyuan Wang, Jian Guan, Shuxu Guo, Meili Xu, and Fengli Gao "The influence of 1/ f noise on the electrical derivative initial peak of high-power semiconductor laser diodes", Proc. SPIE 10339, Pacific Rim Laser Damage 2017: Optical Materials for High-Power Lasers, 103391V (1 August 2017); https://doi.org/10.1117/12.2277597
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KEYWORDS
Diodes
High power lasers
Semiconductor lasers
Indium gallium arsenide
Nondestructive evaluation
Quantum wells
Reliability
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