Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making

Alexander V. Osadchuk; Vladimir S. Osadchuk; Olena M. Zhahlovska; Saule Luganskaya; Andrzej Kociubiński

doi:10.1117/12.2501552

1 October 2018 Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making

Alexander V. Osadchuk, Vladimir S. Osadchuk, Olena M. Zhahlovska, Saule Luganskaya, Andrzej Kociubiński

Author Affiliations +

Proceedings Volume 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018; 108080R (2018) https://doi.org/10.1117/12.2501552
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 2018, Wilga, Poland

Abstract

In the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radio measuring optical transducer has been developed.

Citation Download Citation

Alexander V. Osadchuk, Vladimir S. Osadchuk, Olena M. Zhahlovska, Saule Luganskaya, and Andrzej Kociubiński "Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making", Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108080R (1 October 2018); https://doi.org/10.1117/12.2501552

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