Paper
8 July 2022 Research progress in the preparation of black silicon and its photoelectric detection
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Abstract
Silicon has been widely used in the field of low-cost photodetectors. However, the use of traditional silicon material for high performance infrared detectors is hindered by its indirect band gap. Recently, black silicon has attracted the attention of researchers working on optoelectronics as it can be considered a new type of material with high absorption, and expansion of the response band can be achieved by supersaturated doping. Importantly the material is compatible with the silicon process. With the development of science and technology, the application of photodetectors can have a great impact on our lives, so the research on black silicon photodetectors is also becoming popular. Up to now, significant progress has been made in the development of black silicon photodetectors. This paper summarizes the preparation of black silicon materials and the application prospect of black silicon photodetectors.
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Bo Wang, Libin Tang, Yuping Zhang, and Kar Seng Teng "Research progress in the preparation of black silicon and its photoelectric detection", Proc. SPIE 12284, 2021 International Conference on Optical Instruments and Technology: IRMMW-THz Technologies and Applications, 122840F (8 July 2022); https://doi.org/10.1117/12.2620633
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KEYWORDS
Silicon

Photodetectors

Semiconductor lasers

Reactive ion etching

Etching

Corrosion

Femtosecond phenomena

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