This paper presents results of AC measurements of resistance Rp, phase angle θ, capacity Cp and loss tangent tgδ in dependences on frequency and temperature for InSb-SiO2/Si nanocomposite, immediately after preparation and annealed at 1273 K. The material was obtained by the In+ and Sb+ ions implantation into a SiO2 thin layer. Using obtained parameters frequency dependence of conductivity σ, real and imaginary components of permittivity were determined. This work refers to the hopping mechanism of conductivity and relaxation mechanisms of prepared material.
In this paper results of AC measurements of phase angle θ, capacity Cp and loss tangent tgδ dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity σ and relative permittivity εr were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.
Researches of formation features of nanostructured film condensates deposited by reactive magnetron (HF and DC) sputtering of transition metals diborides targets was analyzed. Amorphous-crystalline composite film (MeB2 + BN), consisting of grains of nanocrystalline phase MeB2 and amorphous graphite-like phase BN filling intergranular space, is formed at reactive sputtering in (Ar + N2) mixture. Investigations of composition and physico-mechanical properties of transition metals boridenitrides composite films were carried out. The amount of phase МеВ2 decreases, and phase BN enlarges with an increase in percentage content of nitrogen in a mixture, that leads to hardness and elastic modulus reduction respectively and to elasticity increase of boridonitrides thin films compared with diborides films. It is shown that viscoelasticity of Me–B–N thin films is caused by the presence of amorphous boron nitride phase.
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