Presentation
5 March 2022 Carbon and manganese in semi-insulating bulk GaN crystals
Mikolaj Amilusik, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Somakumar, Andrzej Suchocki, Michal Bockowski
Author Affiliations +
Abstract
Co-doping with manganese and carbon was performed in gallium nitride (GaN) grown by halide vapor phase epitaxy (HVPE). The crystallized material was examined in terms of its structural, optical, and electrical properties. Basing on Raman and photoluminescence spectra of the samples it will be presented that in the GaN:Mn,C crystals Mn is in a different electrical state (Mn^(3+/4+)) in comparison to Mn in GaN:Mn (Mn^(2+/3+)). This change is due to the presence of carbon, which forces manganese to change the oxidation state. This phenomenon will be analyzed and confirmed by the examination of the electrical properties of obtained crystals.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikolaj Amilusik, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Somakumar, Andrzej Suchocki, and Michal Bockowski "Carbon and manganese in semi-insulating bulk GaN crystals", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200102 (5 March 2022); https://doi.org/10.1117/12.2607476
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KEYWORDS
Crystals

Manganese

Carbon

Gallium nitride

Remote sensing

Oxygen

Raman spectroscopy

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