High-Performance Thin Film Transistors In CO[sub]2[/sub] Laser Crystallized Silicon On Quartz

A. Chiang; W. P. Meuli; N. M. Johnson; M. H. Zarzycki

doi:10.1117/12.934957

9 August 1983 High-Performance Thin Film Transistors In CO₂ Laser Crystallized Silicon On Quartz

A. Chiang, W. P. Meuli, N. M. Johnson, M. H. Zarzycki

Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934957
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

High performance thin-film transistors (TFTs) have been fabricated in single-crystal silicon thin films on fused quartz substrates. The single-crystal islands for device fabrication are produced from patterned and encapsulated polysilicon films crystallized with a scanning CO₂laser. We have previously reported on metal-gate n-channel enhancement mode TFTs with channel mobilities > 900 cm2/V-s, leakage currents < 10 pA, and voltage thresholds < 1 V. In this paper, we will report for the first time our work on depletion mode as well as enhancement mode devices fabricated with a polysilicon-gate NMOS process. These devices have channel lengths of 6 to 20 µm. Channel mobilities of > 900 cm²/V-s are again indicative of single-crystal islands. Leakage currents of ~ 1 pA are achieved by back channel ion implantation. Voltage thresholds vary by < 0.3 V, and the yield for working devices is 98%. The results anticipate the achievement of a high-performance integrated SOI circuit technology.

Citation Download Citation

A. Chiang, W. P. Meuli, N. M. Johnson, and M. H. Zarzycki "High-Performance Thin Film Transistors In CO₂ Laser Crystallized Silicon On Quartz", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934957

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