Large Area Deposition Of Hydrogenated Amorphous Silicon By CW CO[sub]2 [/sub]Lasers

R Bilenchi; M. Musci; R Murri

doi:10.1117/12.939436

14 June 1984 Large Area Deposition Of Hydrogenated Amorphous Silicon By CW CO₂Lasers

R Bilenchi, M. Musci, R Murri

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939436
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

In order to enhance the deposited area and to improve the uniformity of hydrogenated amor phous silicon (a-Si:H) films, obtained from photodissociation of silane molecules by CO₂ laser radiation, two new different experimental approaches are investigated. One of these utilizes a high power (≈ 1 KW) CW CO₂ laser with uniform intensity distribution in a rectangular beam cross section; the other consists in a continuous scanning, along a horizontal plane parallel to the substrate, of a low power (≈ 100 W) gaussian laser beam. Preliminary results about p and n doping of the photodeposited material by boron and pho-sphorous ion implantation proved its high doping efficiency and its structural similarity to the chemical vapor deposition produced material.

Citation Download Citation

R Bilenchi, M. Musci, and R Murri "Large Area Deposition Of Hydrogenated Amorphous Silicon By CW CO₂Lasers", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939436

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