Defect Repair Techniques For X-Ray Masks

D K Atwood; G J Fisanick; W A Johnson; A Wagner

doi:10.1117/12.942340

18 June 1984 Defect Repair Techniques For X-Ray Masks

D K Atwood, G J Fisanick, W A Johnson, A Wagner

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942340
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Low defect density masks are necessary to obtain the high chip yields required in VLSI technology. This paper will outline the boron nitride mask fabrication process that has been developed at AT&T Bell Laboratories, and discuss the nature and distribution of normally encountered defects. The advantages and disadvantages of various repair techniques will be addressed and specific examples of repairs made on silicon integrated circuit X-ray masks will be shown.

Citation Download Citation

D K Atwood, G J Fisanick, W A Johnson, and A Wagner "Defect Repair Techniques For X-Ray Masks", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942340

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available