MeV Implantation For CMOS Applications

Michael I. Current; Russel A. Martin; Kyriakos Doganis; Richard H. Bruce

doi:10.1117/12.946463

9 April 1985 MeV Implantation For CMOS Applications

Michael I. Current, Russel A. Martin, Kyriakos Doganis, Richard H. Bruce

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946463
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The use of MeV ion implantation for CMOS device fabrication is illustrated with a description of an n-type, retrograde well process which is being developed for 1 micron-scale devices. Process design and integration issues are described along with selected results for B and P ion ranges, process modeling and device characteristics.

Citation Download Citation

Michael I. Current, Russel A. Martin, Kyriakos Doganis, and Richard H. Bruce "MeV Implantation For CMOS Applications", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946463

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