Planarization Of Multilevel Metalization Processes: A Critical Review

Yue Kuo

doi:10.1117/12.941025

22 April 1987 Planarization Of Multilevel Metalization Processes: A Critical Review

Yue Kuo

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941025
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

This paper presents a critical review of conventional and novel planarization processes such as Glass Flow, Etchback with or without a sacrificial layer, SOG, BSQ, Polyimide, Substrate-biased PECVD, and Pillars. Key issues in a planarization process, e.g., surface morphology, process simplicity and reliability, material characteristics, and etch control are discussed. A comparison of various planarization processes is tabulated. The future trend of the planarization technology is examined according to the above principles.

Citation Download Citation

Yue Kuo "Planarization Of Multilevel Metalization Processes: A Critical Review", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941025

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