Characterization Of Isolated Silicon Epitaxy Material

L. T. P. Allen; M. W. Batty; W. R. Henderson; T. E. Jersey; D. P. Vu; P. M. Zavracky; J. Narayan

doi:10.1117/12.947400

16 August 1988 Characterization Of Isolated Silicon Epitaxy Material

L. T. P. Allen, M. W. Batty, W. R. Henderson, T. E. Jersey, D. P. Vu, P. M. Zavracky, J. Narayan

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947400
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

An advanced technique of Isolated Silicon Epitaxy (ISE) has been used to produce silicon-on-insulator (SOI) material of high quality. AUGER spectroscopy of ISE shows a chemically clean film with no heavy metal contamination. Structural studies by transmission electron microscopy and Nomarski optical microscopy on ISE SOI show only isolated threading dislocations yielding defect densities of (~3 X 105/cm2). Double crystal x-ray diffraction shows a FWHM of 44 arcsec in the isolated Si film. Material quality is discussed in detail.

Citation Download Citation

L. T. P. Allen, M. W. Batty, W. R. Henderson, T. E. Jersey, D. P. Vu, P. M. Zavracky, and J. Narayan "Characterization Of Isolated Silicon Epitaxy Material", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947400

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