Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product

Yegao Xiao; Zhiqiang Li; Michel Lestrade; Zhanming S. Li

doi:10.1117/12.2252565

22 February 2017 Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product

Yegao Xiao, Zhiqiang Li, Michel Lestrade, Zhanming S. Li

Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 1009825 (2017) https://doi.org/10.1117/12.2252565
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this work, two-dimensional modeling of planar junction AlInAs avalanche photodiodes is reported. Modeling results of dark/photo current, multiplication gain, breakdown voltage, -3dB bandwidth and gain-bandwidth product, and excess noise etc., are presented. The modeling results of multiplication gain and -3dB bandwidth are consistent with the reported experimental demonstration. Design optimization is also explored for high gain-bandwidth product for such AlInAs avalanche photodiodes.

Citation Download Citation

Yegao Xiao, Zhiqiang Li, Michel Lestrade, and Zhanming S. Li "Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009825 (22 February 2017); https://doi.org/10.1117/12.2252565

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