Bismuth incorporation into gallium phosphide

Theresa M. Christian; Daniel A. Beaton; Angelo Mascarenhas; Kirstin Alberi

doi:10.1117/12.2245432

21 December 2016 Bismuth incorporation into gallium phosphide

Theresa M. Christian, Daniel A. Beaton, Angelo Mascarenhas, Kirstin Alberi

Proceedings Volume 10174, International Symposium on Clusters and Nanomaterials; 101740F (2016) https://doi.org/10.1117/12.2245432
Event: International Symposium on Clusters and Nanomaterials, 2015, Richmond, Virginia, United States

Abstract

Gallium phosphide bismide (GaP_1-xBi_x) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 °C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP_0.99Bi_0.01.

Citation Download Citation

Theresa M. Christian, Daniel A. Beaton, Angelo Mascarenhas, and Kirstin Alberi "Bismuth incorporation into gallium phosphide", Proc. SPIE 10174, International Symposium on Clusters and Nanomaterials, 101740F (21 December 2016); https://doi.org/10.1117/12.2245432

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