Paper
22 June 1989 Laser Diode Cooling For High Average Power Applications
D. Mundinger, R Beach, W Benett, R Sol arz, V Sperry
Author Affiliations +
Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976391
Event: OE/LASE '89, 1989, Los Angeles, CA, United States
Abstract
Many applications for semiconductor lasers that require high average power are limited by the inability to remove the waste heat generated by the diode lasers. In order to reduce the cost and complexity of these applications a heat sink package has been developed which is based on water cooled silicon microstructures. Thermal resistivities of less than 0.025°C/01/cm2) have been measured which should be adequate for up to CW operation of diode laser arrays. This concept can easily be scaled to large areas and is ideal for high average power solid state laser pumping. Several packages which illustrate the essential features of this design have been fabricated and tested. The theory of operation will be briefly covered, and several conceptual designs will be described. Also the fabrication and assembly procedures and measured levels of performance will be discussed.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Mundinger, R Beach, W Benett, R Sol arz, and V Sperry "Laser Diode Cooling For High Average Power Applications", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); https://doi.org/10.1117/12.976391
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CITATIONS
Cited by 8 scholarly publications and 2 patents.
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KEYWORDS
Semiconductor lasers

Silicon

Resistance

Diodes

Semiconducting wafers

Technologies and applications

Etching

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