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14 March 2018 Selective area sublimation of GaN for top-down fabrication of nanostructures (Conference Presentation)
Benjamin Damilano, Stéphane Vézian, Sébastien Chenot, Marc Portail, Blandine Alloing, Julien Brault, Aimeric Courville, Virginie Brändli, Mathieu Leroux, Jean Massies
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Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105320F (2018) https://doi.org/10.1117/12.2291935
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
A fraction of a SiNx mono-layer is formed on a GaN layer by exposing the surface to a Si flux. When the sample is heated under vacuum at high temperature (900°C), we observe the sublimation of GaN in the regions uncovered by the thermally resistant SiNx mask. This selective area sublimation (SAS) process can be used for the formation of nanopyramids and nanowires with a diameter down to 4 nm. Also, if InGaN quantum wells are included in the structures before sublimation, InGaN quantum disks with quasi identical sizes in the 3 dimensions of space can be formed using SAS.
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Benjamin Damilano, Stéphane Vézian, Sébastien Chenot, Marc Portail, Blandine Alloing, Julien Brault, Aimeric Courville, Virginie Brändli, Mathieu Leroux, and Jean Massies "Selective area sublimation of GaN for top-down fabrication of nanostructures (Conference Presentation)", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320F (14 March 2018); https://doi.org/10.1117/12.2291935
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KEYWORDS
Gallium nitride
Nanostructures
Indium gallium nitride
Nanowires
Nanolithography
Quantum wells
Silicon
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