Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

Daniel Splith; Stefan Müller; Holger von Wenckstern; Marius Grundmann

doi:10.1117/12.2301370

23 February 2018 Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

Daniel Splith, Stefan Müller, Holger von Wenckstern, Marius Grundmann

Author Affiliations +

Proceedings Volume 10533, Oxide-based Materials and Devices IX; 105330C (2018) https://doi.org/10.1117/12.2301370
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

When investigating Schottky contacts on heteroepitaxial β-Ga₂O₃ thin films, several non-idealities are observed in the current voltage characteristics, which cannot be accounted for with the standard diode current models. In this article, we therefore employed a model for the rigorous calculation of the diode currents in order to understand the origin of this non-idealities. Using the model and a few parameters determined from the measurements, we were able to simulate the characteristics with good agreement to the measured data for temperatures between 30 °C and 150 °C. Fitting of the simulated curves to the measured curves allows a deeper insight into the microscopic origins of said non-idealities.

Citation Download Citation

Daniel Splith, Stefan Müller, Holger von Wenckstern, and Marius Grundmann "Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films", Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330C (23 February 2018); https://doi.org/10.1117/12.2301370

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