D. Pérez Galacho,1 L. Bramerie,2 C. Baudot,3 M. Chaibi,2 S. Messaoudène,3 N. Vulliet,3 L. Vivien,1 C. Peucherethttps://orcid.org/0000-0002-1655-9293,2 D. Marris-Morini1
1Ctr. de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud (France) 2Lab. FOTON, CNRS, Univ. Rennes (France) 3STMicroelectronics (France)
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This paper review our recent work on silicon modulators based on free carrier concentration, working in the O-band of optical communications (1260 nm - 1360 nm) for short distance applications. 25 Gbit/s OOK modulation is obtained using a driving voltage of 3.3 Vpp , and QPSK dual-drive Mach-Zehnder modulator (DDMZM) operating in the O-band is demonstrated for the first time.
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D. Pérez Galacho, L. Bramerie, C. Baudot, M. Chaibi, S. Messaoudène, N. Vulliet, L. Vivien, C. Peucheret, D. Marris-Morini, "Advanced modulation format using silicon modulators in the O-band," Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 105351K (23 February 2018); https://doi.org/10.1117/12.2291888