Paper
8 February 2019 High performance organic thin-film gas sensor based on graphene oxide/TIPS-pentacene hybrid organic semiconducting layer
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Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 1084317 (2019) https://doi.org/10.1117/12.2506448
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
Bottom-gated, top-contact organic field effect transistors (OFET) based nitrogen oxide (NO2) gas sensors were fabricated by incorporating a hybrid organic semiconducting (OSC) layer, which consisting of 6, 13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and Graphene Oxide (GO). By carefully optimizing the proportion of GO in the OSC layer, a tremendous improvement of sensing performance was obtained when exposed to NO2 analyte. Compared with OFET devices based on pure TIPS-pentacene OSC layer, the sensitivity of OFET sensors with hybrid OSC layer had a tenfold enhancement. By analyzing the semiconducting layer through utilizing X-ray diffraction (XPS) and atomic force microscope (AFM), the enhanced sensing performance was attributed to the absorption of the NO2 gas molecules through a porous OSC layer and a preferable interaction between functional groups on the edge of GO sheets and NO2 gas molecules. The improved sensing performance by the hybrid OSC layer also suggests the possibility of GO for the further application in high performance OFET based gas sensors.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huidong Fan, Zhihao Song, Xinming Zhuang, and Junsheng Yu "High performance organic thin-film gas sensor based on graphene oxide/TIPS-pentacene hybrid organic semiconducting layer", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084317 (8 February 2019); https://doi.org/10.1117/12.2506448
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KEYWORDS
Field effect transistors

Semiconductors

Gas sensors

Sensors

Molecules

Organic semiconductors

Graphene

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