Recent Results In The Application Of Electron Beam Direct-Write Lithography

Anthony Gonzales; Jorge Freyer; Samuel S. M. Fok

doi:10.1117/12.968546

1 August 1989 Recent Results In The Application Of Electron Beam Direct-Write Lithography

Anthony Gonzales, Jorge Freyer, Samuel S. M. Fok

Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968546
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

The Perkin-Elmer AEBLE 150 e-beam lithography tool for direct writing on wafers has been installed in several different manufacturing environments. These include prototyping of silicon DRAMs, device development, GaAs production, high-resolution advance device, and full custom ASICs. This paper describes the application of Perkin-Elmer's AEBLE 150 from a large geometry ASIC high wafer throughput requirement, which includes personalization of metal and via layers, to the sub-0.2 μm high-resolution GaAs device. Electron beam personalization of metal and via layers for ASIC devices is advantageous for several reasons: 1) The versatility of the AEBLE 150 allows efficient mixing with optical lithography product lines. 2) The intrinsic machine overlay capability (0.15 μm) has been approached by the observed 0.25 μm overlays with wafers taken from product lots not originally designed for mixing of lithography tools. 3) This maskless technique provides cost savings for small lots where relatively few devices are required. 4) Commercially available resists have been used with good process and throughput performance for devices with 1 μm minimum spaces. For GaAs applications, resolution of 0.25μm or better is required to produce GHz devices. The resolution limit of the AEBLE 150 was investigated with the result that 0.15 μm gates are reliably produced in 0.5 μm thick PMMA over GaAs substrates.

Citation Download Citation

Anthony Gonzales, Jorge Freyer, and Samuel S. M. Fok "Recent Results In The Application Of Electron Beam Direct-Write Lithography", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968546

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KEYWORDS

Semiconducting wafers

Metals

Lithography

Gallium arsenide

X-ray technology

Data conversion

Polymethylmethacrylate

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