J. Abergel,1 F. Rochette,1 S. Gout,1 X. Baudry,1 C. Grangier,1 A. Even,1 J.-L. Santailler,1 D. Giotta,1 R. Obrecht,1 T. Pellerin,1 L. Bonnefond,1 J. Rothman,1 S. Bisotto1
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This LETI/Sofradir/Defir study aims at realizing sub-10 μm pitch HgCdTe infrared FPAs. To cope with the different diode process issues related to pitch reduction-morphologic realization, short-circuits, FTM optimization - a parametric study was carried out - contact size, passivation properties, doping levels, diode processing conditions-. A wafer-level test campaign was conducted to evaluate the process window. It revealed functional MWIR diodes from 15 μm to 3 μm pitch. 7.5 μm pitch 640×512 and 5 μm pitch 64×152 FPA were characterized and turned out to be functional.
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J. Abergel, F. Rochette, S. Gout, X. Baudry, C. Grangier, A. Even, J.-L. Santailler, D. Giotta, R. Obrecht, T. Pellerin, L. Bonnefond, J. Rothman, S. Bisotto, "Development of sub-10µm pitch HgCdTe infrared detectors," Proc. SPIE 11002, Infrared Technology and Applications XLV, 1100222 (7 May 2019); https://doi.org/10.1117/12.2520030