Bipolar resistive switching of Ge2Sb2Te5 material

Zhai Fengxiao; Yunqi Hao; Liu Nannan; Gao Xiaokai; Liu Sujuan; Kun Yang

doi:10.1117/12.2548815

20 December 2019 Bipolar resistive switching of Ge₂Sb₂Te₅ material

Zhai Fengxiao, Yunqi Hao, Liu Nannan, Gao Xiaokai, Liu Sujuan, Kun Yang

Proceedings Volume 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019); 1120939 (2019) https://doi.org/10.1117/12.2548815
Event: Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 2019, Xi'an, China

Abstract

In this paper, the bipolar resistive switching properties of Ge₂Sb₂Te₅ material are studied. By changing the voltage step, compliance current, cycle number and other parameters, the characteristics of the resistive switching voltage, switching ratio, switching polarity and cycle repetition of Ge₂Sb₂Te₅ were tested. The experimental results show that the Ge₂Sb₂Te₅ material film exhibit reversible and reproducible bi-stable resistive switching with lower threshold voltage. The reversible resistance switching between HRS and LRS was induced by bias amplitude and polarity. The electrical resistance ratio of HRS/LRS was ~80:1. After 100 test cycles, the ratio of high resistance state (HRS) and low resistance state (LRS) is not obviously changed, which indicates that the Ge₂Sb₂Te₅ material has excellently nonvolatile bipolar resistance storage characteristics.

Citation Download Citation

Zhai Fengxiao, Yunqi Hao, Liu Nannan, Gao Xiaokai, Liu Sujuan, and Kun Yang "Bipolar resistive switching of Ge₂Sb₂Te₅ material", Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 1120939 (20 December 2019); https://doi.org/10.1117/12.2548815

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KEYWORDS

Switching

Tellurium

Resistance

Antimony

Electrodes

Silver

Germanium

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