GaN nano-porous structures and arrays of nanolasers made by selective area sublimation (Conference Presentation)

Benjamin Damilano

doi:10.1117/12.2552896

10 March 2020 GaN nano-porous structures and arrays of nanolasers made by selective area sublimation (Conference Presentation)

Benjamin Damilano

Author Affiliations +

Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 112800G (2020) https://doi.org/10.1117/12.2552896
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

In this work, we implement a technique of selective area sublimation to shape GaN or GaN/(Ga,In)N layers. The sublimation has a perfect selectivity with the mask material (either SixNy or SiOx) and vertical sidewalls over a depth up to 7 µm are obtained. The mask thickness can be as thin as 1 mono-layer. We apply this technique for the top-down fabrication of several structures: nanoporous GaN and GaN/(Ga,In)N quantum wells, deep nanoholes in GaN and arrays of GaN nanolasers.

Conference Presentation

Citation Download Citation

Benjamin Damilano "GaN nano-porous structures and arrays of nanolasers made by selective area sublimation (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800G (10 March 2020); https://doi.org/10.1117/12.2552896

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