Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)

A.B.M. Hamidul Islam; Dong-Soo Shin; Joon Seop Kwak; Jong-In Shim

doi:10.1117/12.2544036

10 March 2020 Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)

A.B.M. Hamidul Islam, Dong-Soo Shin, Joon Seop Kwak, Jong-In Shim

Author Affiliations +

Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 1128014 (2020) https://doi.org/10.1117/12.2544036
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

There has been a lack of research for proper understanding of defects relaxing the strained lattice of InGaN/(Al)GaN quantum wells. This motivates us to find the relation among the defects, the piezoelectric field (FPZ), and the bandgap shrinkage under high injection. In this work, five similar-structure near-ultraviolet (NUV) light-emitting diodes (LEDs) are used to find systematically that the increase of point defects in the sample decreases both the peak wavelength and FPZ. This effect clearly indicates that the strain relaxation is induced by defects. We propose a model that consistently explain the observed changes in macroscopic characterizations of NUV LEDs.

Conference Presentation

Citation Download Citation

A.B.M. Hamidul Islam, Dong-Soo Shin, Joon Seop Kwak, and Jong-In Shim "Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128014 (10 March 2020); https://doi.org/10.1117/12.2544036

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