Low-temperature growth of Al-doped ZnO by atomic layer deposition for plasmonics (Conference Presentation)

Dhruv Fomra; Kai Ding; Vitaliy S. Avrutin; Natalia Izyumskaya; Nathaniel Kinsey; Ümit Özgür; Hadis Morkoç

doi:10.1117/12.2550537

10 March 2020 Low-temperature growth of Al-doped ZnO by atomic layer deposition for plasmonics (Conference Presentation)

Dhruv Fomra, Kai Ding, Vitaliy S. Avrutin, Natalia Izyumskaya, Nathaniel Kinsey, Ümit Özgür, Hadis Morkoç

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 1128119 (2020) https://doi.org/10.1117/12.2550537
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Transparent conducting oxides, such as Ga-doped ZnO (GZO) and Al-doped ZnO (AZO) are attractive materials for high-performance plasmonic devices operating at telecommunication wavelengths. In this contribution, we compare the growth of epsilon-near-zero GZO and AZO films on sapphire by two different deposition techniques: molecular beam epitaxy (MBE) and atomic layer deposition (ALD). For MBE of GZO, a multiple buffer consisted of a high-temperature MgO layer, a low-temperature ZnO, followed by a high-temperature ZnO layer is employed to assure the crystalline quality of the GZO film. By controlling the growth parameters, including Ga doping level, VI/II ratio, substrate temperature, we are able to produce GZO films at 350 °C with electron mobility between 30 and 50 cm2/V.s, electron concentration up to 7×1020 cm-3, and resistivity down to 2.5×10-4 Ω.cm. For ALD of AZO, without using any buffer, by reducing the Al pulse duration, we are able to grow the AZO films under a large ratio of Al to Zn pulses of 1:6, which improves the activation of Al as an effective dopant. Hence AZO films with electron concentration above 7×1020 cm-3, electron mobility between 10 and 20 cm2/V.s, and resistivity below 6×10-4 Ω.cm have been obtained at 250 °C. The corresponding epsilon-near-zero point in the ALD-grown material was tuned down to 1470 nm. Our data indicate that the ALD method provides a low-temperature route to plasmonic TCOs for telecommunication wavelength range. Effect of electron mobility on optical loss and, therefore, plasmonic figure of merit is discussed.

Conference Presentation

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Dhruv Fomra, Kai Ding, Vitaliy S. Avrutin, Natalia Izyumskaya, Nathaniel Kinsey, Ümit Özgür, and Hadis Morkoç "Low-temperature growth of Al-doped ZnO by atomic layer deposition for plasmonics (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128119 (10 March 2020); https://doi.org/10.1117/12.2550537

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KEYWORDS

Atomic layer deposition

Plasmonics

Zinc oxide

Aluminum

Telecommunications

Crystals

Gallium

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