EUV photo resist shrink characterization using low landing energy SEM (Conference Presentation)

Shimon Levi

doi:10.1117/12.2551624

24 March 2020 EUV photo resist shrink characterization using low landing energy SEM (Conference Presentation)

Shimon Levi

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113251S (2020) https://doi.org/10.1117/12.2551624
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

This study explores SEM induced shrink on EUV resist at different SEM scanning conditions from traditional to low landing energies. Measurement results of different targets, constant space of 28 nm and different pitches, across FEM wafer demonstrate both charging and resist shrink impact on measurement sensitivity and uncertainty. AFM measurements, SEM vs fresh locations are performed to quantify 3D morphology changes of the EUV pattern.

Conference Presentation

Citation Download Citation

Shimon Levi "EUV photo resist shrink characterization using low landing energy SEM (Conference Presentation)", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251S (24 March 2020); https://doi.org/10.1117/12.2551624

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