Si capacitive modulator integration in a 300mm silicon photonics platform with strained-SiGe to enhance the electro-optic effect

I. Charlet; M. Douix; S. Guerber; N. Michit; C. Barrera; J. Gaudy; Y. Désières; S. Kerdilès; P. Acosta-Abla; J. Lassarre; C. Perrot; C. Euvard-Colnat; K. Rovayaz; D. Pellissier-Tanon; S. Cremer; N. Vulliet; P. Grosse; S. Monfray; S. Messaoudène; L. Vivien; B. Szelag; D. Marris-Morini; F. Boeuf

doi:10.1117/12.2556460

2 April 2020 Si capacitive modulator integration in a 300mm silicon photonics platform with strained-SiGe to enhance the electro-optic effect

I. Charlet, M. Douix, S. Guerber, N. Michit, C. Barrera, J. Gaudy, Y. Désières, S. Kerdilès, P. Acosta-Abla, J. Lassarre, C. Perrot, C. Euvard-Colnat, K. Rovayaz, D. Pellissier-Tanon, S. Cremer, N. Vulliet, P. Grosse, S. Monfray, S. Messaoudène, L. Vivien, B. Szelag, D. Marris-Morini, F. Boeuf

Author Affiliations +

Proceedings Volume 11364, Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications; 1136406 (2020) https://doi.org/10.1117/12.2556460
Event: SPIE Photonics Europe, 2020, Online Only

Abstract

Silicon photonic modulators are a key component for electro-optic transmitters within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in a Mach-Zehnder interferometer (MZI) have become the most popular solution. Among the different electrical configurations, PN silicon modulators show a high bandwidth but at the price of a low efficiency. Accumulation–based capacitive modulators are an alternative, allowing to reduce the modulator power consumption. Additionally, strained SiGe exhibits a stronger plasma dispersion effect than silicon for holes. In this work we study the behavior of capacitive modulators with a thin layer of strained SiGe. The modulator fabrication process is based on the standard process flow with only few add-ons. In the first demonstration we show that the thin SiGe layer improved the modulator efficiency by 25%. In addition, further improvement is possible by optimization of the SiGe deposition condition to maximize the SiGe layer stress.

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I. Charlet, M. Douix, S. Guerber, N. Michit, C. Barrera, J. Gaudy, Y. Désières, S. Kerdilès, P. Acosta-Abla, J. Lassarre, C. Perrot, C. Euvard-Colnat, K. Rovayaz, D. Pellissier-Tanon, S. Cremer, N. Vulliet, P. Grosse, S. Monfray, S. Messaoudène, L. Vivien, B. Szelag, D. Marris-Morini, and F. Boeuf "Si capacitive modulator integration in a 300mm silicon photonics platform with strained-SiGe to enhance the electro-optic effect", Proc. SPIE 11364, Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications, 1136406 (2 April 2020); https://doi.org/10.1117/12.2556460

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