Presentation + Paper
2 April 2020 Si capacitive modulator integration in a 300mm silicon photonics platform with strained-SiGe to enhance the electro-optic effect
I. Charlet, M. Douix, S. Guerber, N. Michit, C. Barrera, J. Gaudy, Y. Désières, S. Kerdilès, P. Acosta-Abla, J. Lassarre, C. Perrot, C. Euvard-Colnat, K. Rovayaz, D. Pellissier-Tanon, S. Cremer, N. Vulliet, P. Grosse, S. Monfray, S. Messaoudène, L. Vivien, B. Szelag, D. Marris-Morini, F. Boeuf
Author Affiliations +
Abstract
Silicon photonic modulators are a key component for electro-optic transmitters within data centers. Electro-refractive modulators relying on free carrier plasma dispersion in a Mach-Zehnder interferometer (MZI) have become the most popular solution. Among the different electrical configurations, PN silicon modulators show a high bandwidth but at the price of a low efficiency. Accumulation–based capacitive modulators are an alternative, allowing to reduce the modulator power consumption. Additionally, strained SiGe exhibits a stronger plasma dispersion effect than silicon for holes. In this work we study the behavior of capacitive modulators with a thin layer of strained SiGe. The modulator fabrication process is based on the standard process flow with only few add-ons. In the first demonstration we show that the thin SiGe layer improved the modulator efficiency by 25%. In addition, further improvement is possible by optimization of the SiGe deposition condition to maximize the SiGe layer stress.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Charlet, M. Douix, S. Guerber, N. Michit, C. Barrera, J. Gaudy, Y. Désières, S. Kerdilès, P. Acosta-Abla, J. Lassarre, C. Perrot, C. Euvard-Colnat, K. Rovayaz, D. Pellissier-Tanon, S. Cremer, N. Vulliet, P. Grosse, S. Monfray, S. Messaoudène, L. Vivien, B. Szelag, D. Marris-Morini, and F. Boeuf "Si capacitive modulator integration in a 300mm silicon photonics platform with strained-SiGe to enhance the electro-optic effect", Proc. SPIE 11364, Integrated Photonics Platforms: Fundamental Research, Manufacturing and Applications, 1136406 (2 April 2020); https://doi.org/10.1117/12.2556460
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KEYWORDS
Modulators

Silicon

Amorphous silicon

Crystals

Electro optics

Oxides

Silicon photonics

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