Photosensitive heterostructure p-Сu2ZnSnSe4/n-CdTe

Eduard V. Maistruk; Ivan P. Koziarskyi; Dmytro P. Koziarskyi; Galyna O. Andrushchak

doi:10.1117/12.2553224

6 February 2020 Photosensitive heterostructure p-Сu₂ZnSnSe₄/n-CdTe

Eduard V. Maistruk, Ivan P. Koziarskyi, Dmytro P. Koziarskyi, Galyna O. Andrushchak

Proceedings Volume 11369, Fourteenth International Conference on Correlation Optics; 113691B (2020) https://doi.org/10.1117/12.2553224
Event: Fourteenth International Conference on Correlation Optics, 2019, Chernivtsi, Ukraine

Abstract

The conditions for the production of rectifying heterostructures p-Сu₂ZnSnSe₄/n-CdTe by the method of RF-magnetron sputtering of Сu₂ZnSnSe₄ films onto crystalline substrates n-CdTe were investigated. Mechanisms of forming direct and reverse currents through the heterojunction were set based on the analysis of temperature dependences of I-V characteristics. It is established that the heterostructure generates idle voltage V_OC = 0.42 V, short-circuit current I_SC = 0.175 mA/cm² and the fill factor FF = 0.4 when illuminated at 80 mW/cm².

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Eduard V. Maistruk, Ivan P. Koziarskyi, Dmytro P. Koziarskyi, and Galyna O. Andrushchak "Photosensitive heterostructure p-Сu₂ZnSnSe₄/n-CdTe", Proc. SPIE 11369, Fourteenth International Conference on Correlation Optics, 113691B (6 February 2020); https://doi.org/10.1117/12.2553224

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