CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 11442 > Article
Open Access Paper
11 February 2020 Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP
K. Piwowarski, M. Suproniuk, P. Kamiński, B. Perka, R. Kozłowski, M. Teodorczyk
Author Affiliations +
Proceedings Volume 11442, Radioelectronic Systems Conference 2019; 114420M (2020) https://doi.org/10.1117/12.2565269
Event: Radioelectronic Systems Conference 2019, 2019, Jachranka, Poland
Abstract
The article presents the experimental results of research works aimed at manufacturing photoconductive semiconductor switches (PCSSs) on semi-insulating (SI) gallium phosphide (GaP) wafers. The PCSS is an electrical switch, triggered into the conduction state by means of an optical pulse with specific photon energy. The switches presented in the paper are developed for the applications in power systems and high-pulse voltage generators. The paper presents time courses of the photocurrent being a response to the excitation of semiconductor material with an optical pulse that generates excess charge carriers. The effect of laser beam photon energy on the height and time constant of photocurrent pulses was determined. The results of measurements of photocurrent in the conduction state for various values of electric field strength are presented. The research methodology was discussed and the measuring system used was described. Possible directions of further research were also presented. The research was carried out thanks to the cooperation of scientific teams from the Military University of Technology (WAT) and the Institute of Electronic Materials Technology (ITME).
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
K. Piwowarski, M. Suproniuk, P. Kamiński, B. Perka, R. Kozłowski, and M. Teodorczyk "Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP", Proc. SPIE 11442, Radioelectronic Systems Conference 2019, 114420M (11 February 2020); https://doi.org/10.1117/12.2565269
PROCEEDINGS
 12 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Switches
Resistance
Semiconductors
Gallium
Switching
Control systems
Semiconductor materials
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top