Measurement of temperature dependent refractive indices of GaN and 4H-SiC

Jean Wei; Joel M. Murray; Kent Averett; Shekhar Guha

doi:10.1117/12.2578411

6 March 2021 Measurement of temperature dependent refractive indices of GaN and 4H-SiC

Jean Wei, Joel M. Murray, Kent Averett, Shekhar Guha

Proceedings Volume 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX; 116700Q (2021) https://doi.org/10.1117/12.2578411
Event: SPIE LASE, 2021, Online Only

Abstract

Temperature- and wavelength-dependent values of the ordinary (n_o) and extra-ordinary refractive index (n_e) of GaN and 4H-SiC were measured over wavelength ranges of 1.9 to 7 μm and 1.9 – 5.5 μm, respectively, and over a temperature range of 79 to 400 K. Temperature-dependent Sellmeier equations for both GaN and SiC were obtained and thermooptic coefficients determined.

Conference Presentation

Citation Download Citation

Jean Wei, Joel M. Murray, Kent Averett, and Shekhar Guha "Measurement of temperature dependent refractive indices of GaN and 4H-SiC", Proc. SPIE 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX, 116700Q (6 March 2021); https://doi.org/10.1117/12.2578411

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