Presentation
5 March 2021 Development of DUV-LED grown on high-temperature annealed AlN template
Author Affiliations +
Abstract
A combination of the sputtering deposition and high-temperature annealing is a promising technique for preparing low-dislocation-density AlN templates. In this talk, MOVPE growth behavior of AlGaN films grown on the annealed AlN templates and on conventional MOVPE-grown AlN templates was comprehensively discussed. The low density of screw- and mixed-type dislocations of the annealed AlN templates invoked the formation of hillock structures. By adjusting the MOVPE growth conditions and utilizing sapphire substrates with appropriate surface off-cut, dislocation-induced hillock structures were suppressed. Improved surface flatness resulted in higher EQE and better wavelength uniformity of the DUV-LED fabricated on the annealed AlN templates.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenjiro Uesugi, Ding Wang, Kanako Shojiki, Shigeyuki Kuboya, and Hideto Miyake "Development of DUV-LED grown on high-temperature annealed AlN template", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860U (5 March 2021); https://doi.org/10.1117/12.2576492
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KEYWORDS
Aluminum nitride

Crystals

Deep ultraviolet

External quantum efficiency

Light emitting diodes

Quantum efficiency

Quantum wells

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