Volume MBE production trends for GaSb-based IR photodetector structures

Scott A. Nelson; Joel M. Fasteneau; Dmitri Lubyshev; Michael Kattner; Philip Frey; Amy W. K. Liu; Mark J. Furlong

doi:10.1117/12.2591833

12 April 2021 Volume MBE production trends for GaSb-based IR photodetector structures

Scott A. Nelson, Joel M. Fasteneau, Dmitri Lubyshev, Michael Kattner, Philip Frey, Amy W. K. Liu, Mark J. Furlong

Proceedings Volume 11741, Infrared Technology and Applications XLVII; 1174111 (2021) https://doi.org/10.1117/12.2591833
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

Abstract

After years of progress, GaSb based mid-wave infrared (MWIR) devices have moved from development into manufacturing. To accommodate this maturation, the Molecular Beam Epitaxy (MBE) growth of the MWIR photodetector structures has progressed to a production mode. By necessitating many repetitions of a given growth structure, the increase in volume has enabled the use of Statistical Process Control (SPC) techniques to improve command over critical parameters, and thereby improve the yield and throughput. These products have been grown on GaSb substrates using large format, multi-wafer platens for 100 mm and 125 mm diameter substrates in a Veeco Gen2000 MBE system. The material properties were measured by Atomic Force Microscopy (AFM), High-Resolution X-Ray Diffraction (HRXRD), Photoluminescence (PL), and diode performance (turn-on voltage, dark current (JD), Quantum Efficiency (QE), and cutoff wavelength). Analysis of the run-to-run data will be presented to exhibit the manufacturability of these structures.

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Citation Download Citation

Scott A. Nelson, Joel M. Fasteneau, Dmitri Lubyshev, Michael Kattner, Philip Frey, Amy W. K. Liu, and Mark J. Furlong "Volume MBE production trends for GaSb-based IR photodetector structures", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 1174111 (12 April 2021); https://doi.org/10.1117/12.2591833

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