Presentation
3 August 2021 Molecular beam epitaxial growth of high efficiency AlInN nanowire ultraviolet light-emitting diodes
Hieu Pham Trung Nguyen, Barsha Jain, Ravi Teja Velpula, Moulik Patel
Author Affiliations +
Abstract
We report on the achievement of a new type of ultraviolet light-emitting diodes (LEDs) using AlInN nanowire heterostructures. The molecular beam epitaxial grown AlInN nanowires have relatively high internal quantum efficiency of > 52% at 295nm. The peak emission wavelength is in the range of 280 - 355nm. Moreover, we show that the light extraction efficiency of AlInN nanowire LEDs could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to the random nanowire arrays. This study provides significant insights into the design and fabrication of new type of high performance AlInN nanowire ultraviolet light-emitters.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hieu Pham Trung Nguyen, Barsha Jain, Ravi Teja Velpula, and Moulik Patel "Molecular beam epitaxial growth of high efficiency AlInN nanowire ultraviolet light-emitting diodes", Proc. SPIE 11800, Low-Dimensional Materials and Devices 2021, 118000P (3 August 2021); https://doi.org/10.1117/12.2603389
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