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2 August 2021 Spin mixing conductance at interfaces of TI/FM and HM/FM heterostructures
Olaf Van T Erve, Connie Li, Berry Jonker
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Proceedings Volume 11805, Spintronics XIV; 1180526 (2021) https://doi.org/10.1117/12.2594812
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
The spin mixing conductance is an important figure of merit for spin transport across an interface. This is a particularly important number for Spin Orbit Torque Magnetic Random Access Devices, where spin generated in one layer is used to provide the spin torque needed to flip the magnetization in an adjacent layer. Here the spins are generated in either an topological insulator (TI) or an heavy metal (HM). The overall efficiency of such a device depends on both the charge to spin conversion in the spin generation layer and the spin mixing conductance of the interface.
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Olaf Van T Erve, Connie Li, and Berry Jonker "Spin mixing conductance at interfaces of TI/FM and HM/FM heterostructures", Proc. SPIE 11805, Spintronics XIV, 1180526 (2 August 2021); https://doi.org/10.1117/12.2594812
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KEYWORDS
Interfaces
Heterojunctions
Metals
Magnetism
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