Advanced 200 nm Gate Profile Fabrication With Reactive Ion Etching

H. Hubner; W. Pilz; G. Belle; M. Franosch

doi:10.1117/12.978053

30 January 1990 Advanced 200 nm Gate Profile Fabrication With Reactive Ion Etching

H. Hubner, W. Pilz, G. Belle, M. Franosch

Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978053
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

A processing sequence for the fabrication of Y-shaped profiles for HEMTs and MESFETs using electron beam lithography (EBL) and reactive ion etching (RIE) will be presented. On the top of a tri-layer resist system the gate line is defined by EBL and transferred to the substrate by RIE without expansion of lateral dimensions. The enlargement of the upper part of the profile is done by isotropic and anisotropic RIE steps. The process has been optimized for a gate length of 200 nm including a recess of 120 nm. Details of the different RIE steps and of the metallization will be discussed. First DC-characteristics of a MESFET with an etched Y-gate will be given.

Citation Download Citation

H. Hubner, W. Pilz, G. Belle, and M. Franosch "Advanced 200 nm Gate Profile Fabrication With Reactive Ion Etching", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); https://doi.org/10.1117/12.978053

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