Modeling of high-speed uni-traveling carrier photodiodes

Y. G. Xiao; Z. Q. Li; Z. M. Simon Li

doi:10.1117/12.2601448

9 October 2021 Modeling of high-speed uni-traveling carrier photodiodes

Y. G. Xiao, Z. Q. Li, Z. M. Simon Li

Proceedings Volume 11894, Optoelectronic Devices and Integration X; 118941L (2021) https://doi.org/10.1117/12.2601448
Event: SPIE/COS Photonics Asia, 2021, Nantong, JS, China

Conference Poster

Abstract

Two-dimensional modeling of the InP/InGaAsP modified uni-traveling carrier photodiodes is reported. Basic device characteristics like dark I-V curve, device capacitance effect, frequency response and bandwidth etc., are presented. The simulation shows high bandwidth comparable with the experimental report. The results are further discussed with respect to the cliff layer dopant density

Citation Download Citation

Y. G. Xiao, Z. Q. Li, and Z. M. Simon Li "Modeling of high-speed uni-traveling carrier photodiodes", Proc. SPIE 11894, Optoelectronic Devices and Integration X, 118941L (9 October 2021); https://doi.org/10.1117/12.2601448

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