Poster + Paper
9 October 2021 Modeling of high-speed uni-traveling carrier photodiodes
Y. G. Xiao, Z. Q. Li, Z. M. Simon Li
Author Affiliations +
Conference Poster
Abstract
Two-dimensional modeling of the InP/InGaAsP modified uni-traveling carrier photodiodes is reported. Basic device characteristics like dark I-V curve, device capacitance effect, frequency response and bandwidth etc., are presented. The simulation shows high bandwidth comparable with the experimental report. The results are further discussed with respect to the cliff layer dopant density
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. G. Xiao, Z. Q. Li, and Z. M. Simon Li "Modeling of high-speed uni-traveling carrier photodiodes", Proc. SPIE 11894, Optoelectronic Devices and Integration X, 118941L (9 October 2021); https://doi.org/10.1117/12.2601448
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KEYWORDS
Photodiodes

Capacitance

Diodes

Absorption

Indium gallium arsenide

Quantum efficiency

Semiconductors

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