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4 March 2022 Kilowatt-class, 1-cm diode laser bars at 910-940 nm with improved power, conversion efficiency, and beam quality
Md. Jarez Miah, Anisuzzaman Boni, Dominik Martin, Andrea Knigge, Pietro Della Casa, Paul Crump
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Proceedings Volume 11983, High-Power Diode Laser Technology XX; 1198304 (2022) https://doi.org/10.1117/12.2609831
Event: SPIE LASE, 2022, San Francisco, California, United States
Abstract
GaAs-based 1-cm bars based on extreme-triple-asymmetric (ETAS) epitaxial designs are presented. The investigated structure shows low optical loss and weak power saturation at high current allowing high output power Popt and power-conversion-efficiency ηΕ. The resulting ETAS bars containing 20 emitters with 395 μm wide stripes and 4 mm long cavity, operate with the highest-to-date quasi-continuous-wave power (200 μs, 10 Hz) Popt = 1.9 kW, delivered from just one quantum well, with maximum ηΕ = 67% at THS = 298 K heat-sink temperature. High ηΕ = 62% is maintained at 1.0 kW and remains 55% at 1.5 kW. Even higher Popt = 2.26 kW is achieved at a reduced THS = 203 K. At 203 K, maximum ηΕ climbs to 74% while maintaining a high ηΕ < 60% up to 2 kW, and reaches 55% at 2.26 kW. We also present progress in lateral bar layout, which is further optimized for narrow lateral beam divergence and evaluated for the first time up to 2 kA current. Experimental results show that lateral far field at 95% power can be lowered by 2-3° without sacrificing Popt and ηΕ, reaching ~15° at 1.8 kW at 298 K. Polarization purity also remains < 95% across the full measured range.
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Md. Jarez Miah, Anisuzzaman Boni, Dominik Martin, Andrea Knigge, Pietro Della Casa, and Paul Crump "Kilowatt-class, 1-cm diode laser bars at 910-940 nm with improved power, conversion efficiency, and beam quality", Proc. SPIE 11983, High-Power Diode Laser Technology XX, 1198304 (4 March 2022); https://doi.org/10.1117/12.2609831
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Semiconductor lasers
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