PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We recently fabricated a large-aperture quasi-phase matching stack of 53 GaAs plates using the room-temperature bonding. Although 29 times higher second-harmonic power was obtained than from a 9-plate stacked device, its surface profile was degraded and the positions with high transmittance were limited. By putting the GaAs plates on YAG crystals polished to laser grade instead of directly putting on metallic stages, we confirmed that the surface flatness as well as the transmittance were improved. We are now developing additional processes, which we expect realizes 100-plate or more stacked QPM structures with low loss.
Ichiro Shoji
"Room-temperature-bonded multiple GaAs plates for mid-IR wavelength conversion", Proc. SPIE 11985, Nonlinear Frequency Generation and Conversion: Materials and Devices XXI, 119850B (4 March 2022); https://doi.org/10.1117/12.2612479
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Ichiro Shoji, "Room-temperature-bonded multiple GaAs plates for mid-IR wavelength conversion," Proc. SPIE 11985, Nonlinear Frequency Generation and Conversion: Materials and Devices XXI, 119850B (4 March 2022); https://doi.org/10.1117/12.2612479