Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen; Antti Haarahiltunen; Ville Vähänissi; Toni P. Pasanen; Hele Savin; Mikko A. Juntunen

doi:10.1117/12.2609632

4 March 2022 Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen

Proceedings Volume 11997, Optical Components and Materials XIX; 119970C (2022) https://doi.org/10.1117/12.2609632
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths. Another important characteristic of a high-quality photodiode is rise time which can be used to approximate bandwidth of the photodiode. We show experimentally that the rise time of black silicon photodiodes is shorter than in planar photodiodes when alumina layer with similar charge is used to make an induced junction in both. Additionally, we show that the rise time can be rather well approximated using an analytical equation, which combines Elmore delay from equivalent circuit with standard RC-delay arising from series and load resistances.

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Citation Download Citation

Juha Heinonen, Antti Haarahiltunen, Ville Vähänissi, Toni P. Pasanen, Hele Savin, and Mikko A. Juntunen "Effect of anode sheet resistance on rise time of black silicon induced junction photodiodes", Proc. SPIE 11997, Optical Components and Materials XIX, 119970C (4 March 2022); https://doi.org/10.1117/12.2609632

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