Poster + Presentation + Paper
25 May 2022 Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices
Andrey N. Egorov, Oleg B. Mavritskii, Alexander A. Pechenkin, Dmitry V. Savchenkov, Marta S. Kholina
Author Affiliations +
Conference Poster
Abstract
The application of two-photon absorption (TPA) for local nonequilibrium charge generation in the semiconductor microelectronic structures improves the 3D-spatial resolution of optical testing techniques (such as OBIC and similar), as compared to those, based on single-photon absorption (SPA). In this paper we discuss the results of laser single-event effect (SEE) simulation in digital potentiometer AD8400, using the TPA of tightly focused femtosecond laser radiation. The experiments were performed at the setup, which includes the tunable optical parametric amplifier with output wavelength in 900…1200 nm region. The results were compared to those obtained by SPA technique on the same experimental setup.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrey N. Egorov, Oleg B. Mavritskii, Alexander A. Pechenkin, Dmitry V. Savchenkov, and Marta S. Kholina "Application of two-photon absorption technique for single-event effects simulation in silicon microelectronic devices", Proc. SPIE 12143, Nonlinear Optics and its Applications 2022, 121430K (25 May 2022); https://doi.org/10.1117/12.2621553
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KEYWORDS
Absorption

Pulsed laser operation

Microelectronics

Silicon

Laser energy

Femtosecond phenomena

Semiconductors

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