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Defect distribution and their contribution to photocurrent is imaged in commercially available GaP, GaAsP and GaN using phase modulated multi-photon microspectroscopy. Results show that contributions from defects dominate the photocurrent from GaAsP and GaN. In GaP, such contributions are substantially less. Fabrication process of GaAsP and GaN could be optimized to improve their functionality as photodiodes. The method we have implemented can be used as an ‘in-operando’ characterization tool for understanding the underlying processes that contribute to the external signals in semiconductor devices.
Chuanliang Wang,Jinyang Cai, andKhadga Karki
"Discriminating linear and nonlinear absorption of semiconductors with phase-modulated femtosecond lasers (Conference Presentation)", Proc. SPIE 12314, Optoelectronic Devices and Integration XI, 123140A (29 December 2022); https://doi.org/10.1117/12.2643769
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Chuanliang Wang, Jinyang Cai, Khadga Karki, "Discriminating linear and nonlinear absorption of semiconductors with phase-modulated femtosecond lasers (Conference Presentation)," Proc. SPIE 12314, Optoelectronic Devices and Integration XI, 123140A (29 December 2022); https://doi.org/10.1117/12.2643769