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We report on a SESAM modelocked GDD balanced VECSEL embedding the active region in quaternary Al15Ga85AsSb. The GDD is flattened by a multilayer semiconductor dielectric top-coating allowing for stable femtosecond operation with a standard SESAM and high-quality YAG Brewster windows. We avoid tradeoffs that would limit the output power. This GDD balanced VECSEL is the next step towards higher level of integration: pump-DBR implementation, demonstration of 1:1 modelocking, and absorber integration will yield a 2-µm MIXSEL, where gain medium and absorber are grown in one monolithic structure.
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