Probability model of bridging defects for random logic via in 3nm double patterning technology at 0.33 NA

Xiaojing Su; Jingjing Li; Taian Fan; Jiashuo Wang; Lisong Dong; Yajuan Su; Yayi Wei

doi:10.1117/12.2658126

28 April 2023 Probability model of bridging defects for random logic via in 3nm double patterning technology at 0.33 NA

Xiaojing Su, Jingjing Li, Taian Fan, Jiashuo Wang, Lisong Dong, Yajuan Su, Yayi Wei

Proceedings Volume 12495, DTCO and Computational Patterning II; 124950C (2023) https://doi.org/10.1117/12.2658126
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) double patterning (DP) with a numeric aperture (NA) of 0.33 can be introduced for the critical via layers at 3nm logic node. The minimum center to center (C2C) distance of a via pattern may form bridging defects even adopting EUV DP. The implemented via process, pattern shifts induced by EUV illuminator, overlay capability and OPC strategies may lead to bridging defects in EUV DP process. This paper will put forth a compact model to detect potential bridging hotspots and predict the corresponding probability of failure considering aforementioned process variations. The feasible design, patterning solutions, and process parameters can be optimized and compensated quantitatively to avoid design updates and mask rebuild.

Citation Download Citation

Xiaojing Su, Jingjing Li, Taian Fan, Jiashuo Wang, Lisong Dong, Yajuan Su, and Yayi Wei "Probability model of bridging defects for random logic via in 3nm double patterning technology at 0.33 NA", Proc. SPIE 12495, DTCO and Computational Patterning II, 124950C (28 April 2023); https://doi.org/10.1117/12.2658126

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