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4 October 2023 Tailoring ultrafast photoconductive response in GeS and GeSe by zero-valent Cu intercalation
Kateryna Kushnir, Sepideh Khanmohammadi, Catherine Tran, Nikoloz Gegechkori, Teng Shi, Srihari Kastuar, Chinedu Ekuma, Kristie J. Koski, Lyubov V. Titova
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Proceedings Volume 12683, Terahertz Emitters, Receivers, and Applications XIV; 126830B (2023) https://doi.org/10.1117/12.2680630
Event: SPIE Optical Engineering + Applications, 2023, San Diego, California, United States
Abstract
GeS and GeSe are 2D semiconductors with band gaps in the near infrared and predicted high carrier mobility. We find that excitation with 800 nm pulses results in long-lived free photocarriers, persisting for hundreds of picoseconds, in GeS and GeSe noribbons. We also demonstrate that zerovalent Cu intercalation is an effective tool for tuning the photoconductive response. Intercalation of ~ 3 atomic % of zerovalent Cu reduces the carrier lifetime in GeSe and GeS. In GeS, it also shortens the photoconductivity rise and improves carrier mobility.
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Kateryna Kushnir, Sepideh Khanmohammadi, Catherine Tran, Nikoloz Gegechkori, Teng Shi, Srihari Kastuar, Chinedu Ekuma, Kristie J. Koski, and Lyubov V. Titova "Tailoring ultrafast photoconductive response in GeS and GeSe by zero-valent Cu intercalation", Proc. SPIE 12683, Terahertz Emitters, Receivers, and Applications XIV, 126830B (4 October 2023); https://doi.org/10.1117/12.2680630
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KEYWORDS
Ultrafast phenomena
Optical properties
Spectroscopy
Time resolved spectroscopy
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