Tailorable semiconductor laser platform in the 7xx nm regime

Andreas Schramm; Luukas Kuusela; Mika Mähönen; Soile Talmila; Ville Vilokkinen; Petteri Uusimaa

doi:10.1117/12.3001858

8 March 2024 Tailorable semiconductor laser platform in the 7xx nm regime

Andreas Schramm, Luukas Kuusela, Mika Mähönen, Soile Talmila, Ville Vilokkinen, Petteri Uusimaa

Proceedings Volume 12882, Optical Components and Materials XXI; 1288205 (2024) https://doi.org/10.1117/12.3001858
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We report on tailoring capabilities in the 7xx nm wavelength range utilizing GaAsP or InGaAsP quantum wells (QW) embedded in AlGaAs. Laser structures are grown using metal-organic chemical vapor deposition. Wafers and manufactured lasers are thoroughly characterized, and lifetime tests are performed to validate laser reliabilities. Changing QW parameters enables us to tune the wavelength or polarization of the laser emission.

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Citation Download Citation

Andreas Schramm, Luukas Kuusela, Mika Mähönen, Soile Talmila, Ville Vilokkinen, and Petteri Uusimaa "Tailorable semiconductor laser platform in the 7xx nm regime", Proc. SPIE 12882, Optical Components and Materials XXI, 1288205 (8 March 2024); https://doi.org/10.1117/12.3001858

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