Presentation + Paper
12 March 2024 Waveguide-coupled germanium lateral uni-traveling-carrier photodetector for coherent applications at 130 Gbaud and beyond
Author Affiliations +
Proceedings Volume 12891, Silicon Photonics XIX; 128910L (2024) https://doi.org/10.1117/12.3001629
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We propose a novel waveguide-coupled germanium lateral uni-traveling carrier photodetector (L-UTC PD) structure, which offers tremendous potential for coherent communication applications at 130 Gbaud and beyond. This PD structure is very simple and can be easily fabricated in a commercial silicon photonics (SiPh) foundry. The fabricated L-UTC PD has a very low dark current (~4.2 nA), a high responsivity (~0.66 A/W@1550 nm) and a small capacitance (<14.6 fF). Moreover, the L-UTC PD exhibits excellent tolerance to high optical input power, with a 3-dB bandwidth exceeding 67 GHz, even at a high photocurrent of 3.0 mA.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Jianping Wang, Takasi Simoyama, Akira Oka, Mario Alberto Serrano-Núñez, Yoshihiko Yoshida, Kiyomasa Doi, Ayahito Uetake, Shuntaro Makino, Akira Ishii, and Suguru Akiyama "Waveguide-coupled germanium lateral uni-traveling-carrier photodetector for coherent applications at 130 Gbaud and beyond", Proc. SPIE 12891, Silicon Photonics XIX, 128910L (12 March 2024); https://doi.org/10.1117/12.3001629
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KEYWORDS
Germanium

Waveguides

Photocurrent

Photodetectors

Dark current

Optical coherence

Silicon

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