Study on interface modulation effect on the resistive switching performance of HfO2-Based memory devices

Jinyan Pan; Yuxiang Lin; Hongyang He; Shuya Yang; Maojing Li; Yulong Gao; Tiejun Li

doi:10.1117/12.3011531

2 November 2023 Study on interface modulation effect on the resistive switching performance of HfO₂-Based memory devices

Jinyan Pan, Yuxiang Lin, Hongyang He, Shuya Yang, Maojing Li, Yulong Gao, Tiejun Li

Author Affiliations +

Proceedings Volume 12919, International Conference on Electronic Materials and Information Engineering (EMIE 2023); 1291905 (2023) https://doi.org/10.1117/12.3011531
Event: 3rd International Conference on Electronic Materials and Information Engineering (EMIE 2023), 2023, Guangzhou,, China

Abstract

Inserting an embedding layer is an attractive solution to modulate the resistive switching performance of the memory according to the interfacial modulation effect. In this work, HfO₂-based resistive random access memory is investigated with an ultrathin embedding Al₂O₃ layer. Three sets of memories were designed by embedding the ultrathin Al₂O₃ layer at different positions in the sandwich device, taking advantage of the large forbidden band width and low Gibbs free energy of the Al₂O₃. The ultrathin Al₂O₃ layer can modulate the energy band distribution, when inserted between HfO₂ and ITO electrode, it functions to reduce the loss of oxygen ions, thereby limiting the region of oxygen vacancy conductive filament rupture. The results show that the Al/HfO₂/Al₂O₃/ITO memory has a higher resistance switching ratio and more stable endurance characteristics. Consequently, the ultrathin embedding layer dominates the resistive switching mechanism which is critical to formation and rupture of conductive filaments, and significantly to improve the endurance and uniformity of the resistive state.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jinyan Pan, Yuxiang Lin, Hongyang He, Shuya Yang, Maojing Li, Yulong Gao, and Tiejun Li "Study on interface modulation effect on the resistive switching performance of HfO₂-Based memory devices", Proc. SPIE 12919, International Conference on Electronic Materials and Information Engineering (EMIE 2023), 1291905 (2 November 2023); https://doi.org/10.1117/12.3011531

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KEYWORDS

Aluminum

Oxygen

Ions

Resistance

Switching

Modulation

Electrodes

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