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We have developed a high-resolution x-ray microscope with spatial resolution better than 100 nm. The utilized x-ray energy of the microscope is 17.5 keV that can penetrate through standard silicon substrate and enables to observe embedded nanoscale metal structure and defects, nondestructively. We have applied the present x-ray microscope for investigating 3D flash memory devices and observed precise metal filling structure in there. In addition, defects in the circuit area were also found.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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K. Omote, R. Hirose, H. Tsukada, A. Hamaguchi, Y. Yoshitake, K. Yoshino, "Non-destructive investigation for metal structure in 3D flash memory by an ultra-high resolution x-ray microscope," Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129551B (9 April 2024); https://doi.org/10.1117/12.3010113