Advancement in DualBeam (FIB/SEM) technologies for automatic defect root cause analysis

Zhi Hui Zhu; Arun Sundar; Sarah Gollub; Mahmoud Amin; John McPhillips; Pete Carleson; Mary Wu

doi:10.1117/12.3014195

9 April 2024 Advancement in DualBeam (FIB/SEM) technologies for automatic defect root cause analysis

Zhi Hui Zhu, Arun Sundar, Sarah Gollub, Mahmoud Amin, John McPhillips, Pete Carleson, Mary Wu

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129553Q (2024) https://doi.org/10.1117/12.3014195
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

In the pursuit of high yield on semiconductor production with shrinking device features and complex 3D structures, defect inspection and root cause analysis are critical for yield learning. While top-down SEM-imaging of E-beam inspector provides an estimate of wafer defectivity, root cause analysis reveals the ground truth for the defects captured by E-beam inspector. A large variety of defect types are present for different devices, such as memory (ex. 3D NAND, DRAM), logic, or MEMS. Defect root cause analysis is necessary for all. Traditionally, defect root cause analysis has been completely manual, which is both cumbersome and time-consuming for engineers. This poster introduces the pivotal and innovative workflow on a DualBeam that automates every step of Defect Root Cause Analysis, from defect navigation, mill preparation, milling to final imaging of defect cross section. This new technology provides analysis that is: precisely on defect; vertically milled on a deep structure; planar across the defect plane; and crisply SEM imaged on the cross section. This paper also discusses the two automatic workflows of achieving Defect Root Cause Analysis. Deep mill exposes a cross section designed for fast turnaround time (TAT) of high aspect ratio devices defect analysis with high resolution SEM images, while piece extraction provides an easy TEM sample preparation method for intensive defect analysis. Both methods allow wafers to stay in the fab instead of breaking wafers for the lab environment.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Zhi Hui Zhu, Arun Sundar, Sarah Gollub, Mahmoud Amin, John McPhillips, Pete Carleson, and Mary Wu "Advancement in DualBeam (FIB/SEM) technologies for automatic defect root cause analysis", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129553Q (9 April 2024); https://doi.org/10.1117/12.3014195

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