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Extreme ultraviolet lithography (EUVL) enables integrated circuit (IC) industry to manufacture chips with increased transistor density per volume unit, so the Moore’s law remains true to date. To support the endless requirement of reducing critical dimension (CD), chemically amplified resist (CAR) has been designed to address the resolution, line width roughness, and sensitivity (RLS) in nanoscale level. However, a good Litho performance from an EUV photoresist may not always be transferred into a good etch performance, limiting the stochastic defects after patten transfer is the key to achieve a good after etch inspection (AEI) defectivity. In this paper, we report the EUV photoresist design strategies to acquire good AEI defectivity with the understanding of CAR’s property in a defined pattern transfer scheme with special focus on small molecule in photoresist. The CAR’s Litho performance and the corelated etch performance will be discussed, the component etch rate and its correlation to photoresist etch performance will be covered.
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