|
Astronomical instrumentation for measurements in the Far Ultraviolet (FUV, 90−200 nm) have historically considered aluminum (Al) thin film mirrors due to this material high reflectance over this wavelength range. However, the native aluminum oxide layer that forms on Al upon exposure to the atmosphere is strongly absorbing in this wavelength range, requiring that the films be protected with a dielectric that inhibits oxidation. Typically, magnesium fluoride (MgF2) or lithium fluoride (LiF) coatings are used as protective layers, but each has shortcomings. For example, MgF2 has an absorption cutoff at 115 nm that reduces performance below this wavelength, which is a critical part of the FUV spectrum for observational astrophysics. The use of LiF as a protection for Al provides a lower absorption cutoff at 100 nm, but it is hygroscopic and thus susceptible to degradation in humid conditions. Our team at GSFC has developed a new reactive Physical Vapor Deposition (rPVD) process that consists of a fluorination process with XeF2 gas combined with our traditional PVD process. We have found that this new rPVD process produces Al+XeF2+LiF (XeLiF) and Al+XeF2+MgF2 (XeMgF2) mirror coatings with unprecedented reflectance. In addition, the rPVD process seems to produce much more environmentally stable coatings (when compared to the conventional process without the XeF2 fluorination). We report on IR/Vis/UV reflectance of XeLiF and XeMgF2 mirrors. The surface roughness as well as the FUV reflectance measured over a period of 8 months for a XeLiF sample with a relatively thin (≃ 30 nm) Al layer are also reported. We have also been investigating the compatibility of this rPVD coating process for potential efficiency enhancements of Si-based gratings. Since it is known that the XeF2 vapor is a strong Si etchant, we are investigating if the native SiO2 layer on Si is sufficient to protect the groove profile of E-beam-ruled Si gratings from degradation. Preliminary results indicate that the native SiO2 layer is an effective barrier against etching of Si by XeF2.
|
